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| NGD15N41CL, NGB15N41CL, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N-Channel DPAK, D2PAK and TO-220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features http://onsemi.com 15 AMPS 410 VOLTS VCE(on) 3 2.1 V @ IC = 10 A, VGE . 4.5 V C * * * * * * * * * * * Ideal for Coil-on-Plug Applications DPAK Package Offers Smaller Footprint and Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE) Pb-Free Packages are Available 1 Value 440 440 15 15 50 8.0 ESD PD TJ, Tstg 800 107 0.71 -55 to +175 V Watts W/C C Unit VDC VDC VDC ADC AAC kV Rating Collector-Emitter Voltage Collector-Gate Voltage Gate-Emitter Voltage Collector Current-Continuous @ TC = 25C - Pulsed ESD (Human Body Model) R = 1500 , C = 100 pF ESD (Machine Model) R = 0 , C = 200 pF Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range Symbol VCES VCER VGE IC ESD G RG RGE E 4 12 DPAK CASE 369C STYLE 2 3 4 2 3 4 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) D2PAK CASE 418B STYLE 4 TO-220AB CASE 221A STYLE 9 1 2 3 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. DEVICE MARKING INFORMATION See general marking information in the device marking section on page 8 of this data sheet. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 May, 2006 - Rev. 7 1 Publication Order Number: NGD15N41CL/D NGD15N41CL, NGB15N41CL, NGP15N41CL UNCLAMPED COLLECTOR-TO-EMITTER AVALANCHE CHARACTERISTICS (-55 TJ 175C) Characteristic Single Pulse Collector-to-Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.6 A, L = 1.8 mH, Starting TJ = 25C VCC = 50 V, VGE = 5.0 V, Pk IL = 15 A, L = 1.8 mH, Starting TJ = 125C Symbol EAS Value 250 200 Unit mJ THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient DPAK (Note 1) D2PAK (Note 1) Symbol RJC RJA RJA RJA TL Value 1.4 100 50 62.5 275 C Unit C/W TO-220 Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Clamp Voltage BVCES IC = 2.0 mA IC = 10 mA Zero Gate Voltage Collector Current ICES TJ = -40C to 150C TJ = -40C to 150C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C Reverse Collector-Emitter Clamp Voltage BVCES(R) IC = -75 mA TJ = 25C TJ = 150C TJ = -40C Gate-Emitter Clamp Voltage Gate-Emitter Leakage Current Gate Resistor Gate Emitter Resistor BVGES IGES RG RGE IG = 5.0 mA VGE = 10 V - - TJ = -40C to 150C TJ = -40C to 150C TJ = -40C to 150C TJ = -40C to 150C 380 380 - - - - - - 27 30 25 11 384 - 10 410 410 2.0 10 1.0 0.7 12 0.1 33 36 31 13 640 70 16 440 440 20 40* 10 2.0 25* 1.0 37 40 35 15 1000 - 26 VDC ADC VDC VCE = 350 V, VGE = 0 V ADC Reverse Collector-Emitter Leakage Current IECS mA VCE = -24 V VDC k ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGE(th) IC = 1.0 mA, VGE = VCE - TJ = 25C TJ = 150C TJ = -40C - 1.1 0.75 1.2 - 1.4 1.0 1.6 3.4 1.9 1.4 2.1* - mV/C VDC Threshold Temperature Coefficient (Negative) - 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width v 300 S, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range. http://onsemi.com 2 NGD15N41CL, NGB15N41CL, NGP15N41CL ELECTRICAL CHARACTERISTICS (continued) Characteristic Symbol Test Conditions Temperature Min Typ Max Unit ON CHARACTERISTICS (continued) (Note 3) Collector-to-Emitter On-Voltage VCE(on) IC = 6.0 A, VGE = 4.0 V TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C TJ = -40C to 150C 1.0 0.9 1.1 1.3 1.2 1.4 1.4 1.5 1.4 1.3 1.3 1.4 8.0 1.6 1.5 1.65 1.8 1.7 1.8 2.0 2.0 2.0 1.9 1.9 1.95 15 1.8 1.8 1.9* 2.0* 1.9 2.0* 2.2 2.3* 2.2 2.1 2.1 2.1* 25 Mhos VDC IC = 8.0 A, VGE = 4.0 V IC = 10 A, VGE = 4.0 V IC = 10 A, VGE = 4.5 V Forward Transconductance gfs VCE = 5.0 V, IC = 6.0 A DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance CISS COSS CRSS 400 VCC = 25 V, VGE = 0 V f = 1.0 MHz TJ = -40C to 150C 30 3.0 650 55 4.5 1000 100 8.0 pF SWITCHING CHARACTERISTICS Turn-Off Delay Time (Inductive) td(off) tf td(off) tf td(on) tr VCC = 300 V, IC = 6.5 A RG = 1.0 k, L = 300 H VCC = 300 V, IC = 6.5 A RG = 1.0 k, L = 300 H VCC = 300 V, IC = 6.5 A RG = 1.0 k, RL = 46 , VCC = 300 V, IC = 6.5 A RG = 1.0 k, RL = 46 , VCC = 10 V, IC = 6.5 A RG = 1.0 k, RL = 1.5 VCC = 10 V, IC = 6.5 A RG = 1.0 k, RL = 1.5 TJ = 25C TJ = 150C TJ = 25C TJ = 150C TJ = 25C TJ = 150C TJ = 25C TJ = 150C TJ = 25C TJ = 150C TJ = 25C TJ = 150C - - - - - - - - - - - - 4.0 4.5 6.0 10 3.0 3.5 8.0 12 0.7 0.7 4.0 5.0 10 10 12 12 10 10 15 15 4.0 4.0 7.0 7.0 Sec Sec Sec Fall Time (Inductive) Turn-Off Delay Time (Resistive) Fall Time (Resistive) Turn-On Delay Time Rise Time 3. Pulse Test: Pulse Width v 300 S, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range. http://onsemi.com 3 NGD15N41CL, NGB15N41CL, NGP15N41CL TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted) 60 IC, COLLECTOR CURRENT (AMPS) 50 40 30 20 10 0 TJ = 25C 5V 4.5 V 4V 3.5 V 3V 2.5 V 0 1 2 3 4 5 6 7 8 IC, COLLECTOR CURRENT (AMPS) VGE = 10 V 60 VGE = 10 V 50 5V 40 30 20 10 0 TJ = -40C 4.5 V 4V 3.5 V 3V 2.5 V 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics 60 IC, COLLECTOR CURRENT (AMPS) VGE = 10 V 50 40 30 20 10 0 TJ = 150C 5V 4.5 V 4V 3.5 V 3V 2.5 V 30 IC, COLLECTOR CURRENT (AMPS) Figure 2. Output Characteristics VCE = 10 V 25 20 15 10 5 0 TJ = 25C TJ = 150C 0 0.5 1 1.5 2 TJ = -40C 2.5 3 3.5 4 4.5 5 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) VGE, GATE TO EMITTER VOLTAGE (VOLTS) Figure 3. Output Characteristics VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 4. Transfer Characteristics 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 VGE = 5 V IC = 25 A IC = 20 A IC = 15 A IC = 10 A IC = 5 A 3 2.5 2 1.5 1 0.5 0 TJ = 25C IC = 15 A IC = 10 A IC = 5 A 3 4 5 6 7 8 9 10 TJ, JUNCTION TEMPERATURE (C) GATE TO EMITTER VOLTAGE (VOLTS) Figure 5. Collector-to-Emitter Saturation Voltage versus Junction Temperature Figure 6. Collector-to-Emitter Voltage versus Gate-to-Emitter Voltage http://onsemi.com 4 NGD15N41CL, NGB15N41CL, NGP15N41CL COLLECTOR TO EMITTER VOLTAGE (VOLTS) 3 2.5 2 1.5 1 0.5 0 IC = 15 A IC = 10 A IC = 5 A TJ = 150C 10000 1000 100 10 1 0 Ciss C, CAPACITANCE (pF) Coss Crss 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 GATE TO EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 7. Collector-to-Emitter Voltage versus Gate-to-Emitter Voltage 2 THRESHOLD VOLTAGE (VOLTS) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -30 -10 10 30 50 70 90 110 130 150 Mean - 4 IL, LATCH CURRENT (AMPS) 1.8 Mean + 4 Mean 30 25 20 15 10 Figure 8. Capacitance Variation VCC = 50 V VGE = 5 V RG = 1000 L = 2 mH L = 3 mH L = 6 mH 5 0 -50 -25 0 25 50 75 100 125 150 175 TEMPERATURE (C) TEMPERATURE (C) Figure 9. Gate Threshold Voltage versus Temperature 30 25 IL, LATCH CURRENT (AMPS) 20 15 L = 3 mH 10 L = 6 mH 5 0 -50 -25 L = 2 mH VCC = 50 V VGE = 5 V RG = 1000 12 10 SWITCHING TIME (s) 8 6 4 2 Figure 10. Minimum Open Secondary Latch Current versus Temperature VCC = 300 V VGE = 5 V RG = 1000 IC = 10 A L = 300 H tf td(off) 0 25 50 75 100 125 150 175 0 -50 -30 -10 10 30 50 70 90 110 130 150 TEMPERATURE (C) TEMPERATURE (C) Figure 11. Typical Open Secondary Latch Current versus Temperature http://onsemi.com 5 Figure 12. Inductive Switching Fall Time versus Temperature NGD15N41CL, NGB15N41CL, NGP15N41CL 10 R(t), TRANSIENT THERMAL RESISTANCE (C/Watt) Duty Cycle = 0.5 0.2 1 0.1 0.05 0.02 0.1 0.01 Single Pulse P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 TJ(pk) - TA = P(pk) RJA(t) RJC R(t) for t 0.2 s 0.01 0.00001 0.0001 0.001 0.01 0.1 t,TIME (S) 1 10 100 1000 Figure 13. Transient Thermal Resistance (Non-normalized Junction-to-Ambient mounted on fixture in Figure 14) 1.5 4 4 0.125 4 Figure 14. Test Fixture for Transient Thermal Curve (48 square inches of 1/8, thick aluminum) http://onsemi.com 6 NGD15N41CL, NGB15N41CL, NGP15N41CL 100 COLLECTOR CURRENT (AMPS) DC 10 100 s 1 1 ms 10 ms 0.1 100 ms COLLECTOR CURRENT (AMPS) 100 10 DC 1 100 s 1 ms 10 ms 0.1 100 ms 0.01 1 10 100 1000 0.01 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE (VOLTS) COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 255C) Figure 16. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 1255C) 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) t1 = 1 ms, D = 0.05 10 t1 = 2 ms, D = 0.10 t1 = 3 ms, D = 0.30 100 t1 = 1 ms, D = 0.05 10 t1 = 2 ms, D = 0.10 t1 = 3 ms, D = 0.30 1 I(pk) 0.1 t1 t2 DUTY CYCLE, D = t1/t2 10 100 1000 1 I(pk) 0.1 t1 t2 DUTY CYCLE, D = t1/t2 0.01 1 10 100 1000 0.01 1 COLLECTOR-EMITTER VOLTAGE (VOLTS) COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 17. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C) Figure 18. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C) http://onsemi.com 7 NGD15N41CL, NGB15N41CL, NGP15N41CL ORDERING INFORMATION Device NGD15N41CLT4 NGD15N41CLT4G NGB15N41CLT4 NGB15N41CLT4G NGP15N41CL NGP15N41CLG Package Type DPAK DPAK (Pb-Free) D2PAK (Pb-Free) TO-220 TO-220 (Pb-Free) D2PAK Shipping 2500/Tape & Reel 2500/Tape & Reel 800/Tape & Reel 800/Tape & Reel 50 Units/Rail 50 Units/Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. MARKING DIAGRAMS DPAK CASE 369C STYLE 7 D2PAK CASE 418B STYLE 4 TO-220AB CASE 221A STYLE 9 4 Collector 1 Gate 2 Collector 3 Emitter YWW GD 15N41G 4 Collector 1 Gate 4 Collector NGB 15N41CLG AYWW 3 Emitter NGP 15N41CLG AYWW 1 Gate 2 Collector 3 Emitter 2 Collector A Y WW G = Assembly Location = Year = Work Week = Pb-Free Device http://onsemi.com 8 NGD15N41CL, NGB15N41CL, NGP15N41CL PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O -T- B V R 4 SEATING PLANE INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- C E DIM A B C D E F G H J K L R S U V Z S A 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 NGD15N41CL, NGB15N41CL, NGP15N41CL PACKAGE DIMENSIONS D2PAK CASE 418B-04 ISSUE H C E -B- 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 GATE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 V W 1 2 3 S A -T- SEATING PLANE K G D 3 PL 0.13 (0.005) H M J W TB M VARIABLE CONFIGURATION ZONE L M R N U L P L M STYLE 4: PIN 1. 2. 3. 4. M F VIEW W-W 1 F VIEW W-W 2 F VIEW W-W 3 SOLDERING FOOTPRINT* 8.38 0.33 10.66 0.42 1.016 0.04 6.096 0.24 17.02 0.67 3.05 0.12 mm inches SCALE 3:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 10 NGD15N41CL, NGB15N41CL, NGP15N41CL PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AB NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.020 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 GATE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 0.508 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 -T- B 4 SEATING PLANE F T C S Q 123 A U K H Z L V G D N R J STYLE 9: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 11 NGD15N41CL/D |
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